Graded gap semiconductor optical device
US4371232A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 25, 1980 |
| Grant date | Feb 1, 1983 |
| Priority date | — |
| Expiry date | Apr 25, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A variable temperature method for the preparation of single and multiple taxial layers of single-phase (e.g., face-centered cubic), ternary lead chalcogenide alloys (e.g., lead cadmium sulfide [Pb.sub.1-w Cd.sub.w ].sub.a [S].sub.1-a wherein w varies between zero and fifteen hundredths, inclusive, and a=0.500.+-.0.003), deposited upon substrates of barium fluoride, BaF.sub.2, maintained in near thermodynamic equilibrium with concurrently sublimated lead alloy and chalcogenide sources. During preparation, the temperature of the substrate is varied, thereby providing an epilayer with graded composition and predetermined electrical and optical properties along the direction of growth. This growth technique can be used to produce infrared lenses, narrowband detectors, and double heterojunction lasers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.