Method of providing gettering sites through electrode windows
US4371403A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 1980 |
| Grant date | Feb 1, 1983 |
| Priority date | — |
| Expiry date | Dec 18, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating semiconductor integrated circuit devices in which leakage currents at the junction and at the surface of one or more regions of desired conductivity type formed in a substrate are substantially reduced. Shallow source and drain regions are formed by ion implantation of arsenic, an insulating layer of phosphosilicate glass (PSG) is formed on the entire surface of the semiconductor substrate, openings are cut through the PSG layer to form windows of smaller area than the surface area of the regions for contacts, electrodes, to the regions, oxygen ions having the effect of gettering defects are ion implanted through these windows into the surface of source and drain regions but controlled so as not to reach the pn junctions, and the PSG layer is thermally melted to produce a MOS memory device, other MOS devices, or bipolar transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.