Method for controlling impurities in liquid phase epitaxial growth
US4371420A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 9, 1981 |
| Grant date | Feb 1, 1983 |
| Priority date | — |
| Expiry date | Mar 9, 2001 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/916
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a process for growth of a layer of semiconductor material by precipitation from a solution of the semiconductor material in a solvent by liquid phase epitaxial growth (LPE), the improvement is the step of adding from approximately 0.01% to 1.0% by weight of a material which forms a stable oxide or sulfide and is soluble in the solvent to the solution prior to the step of precipitating the semiconductor layer to eliminate the deleterious effects of residual oxygen. A relatively short annealing time is required to dissolve the addition in the solvent and allow the addition to react with dissolved oxygen or other impurities before a conventional LPE growth process may be initiated, although high temperature anneals of varying length may precede or follow the addition of the oxide-forming or sulfide-forming material. Zirconium, titanium, vanadium, scandium, yttrium, and aluminum are in general suitable for use as the oxide-forming material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.