Resist system having increased light response
US4371608A · kind A · utility
7Cited by
5References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 22, 1981 |
| Grant date | Feb 1, 1983 |
| Priority date | — |
| Expiry date | Jun 22, 2001 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/97
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A chalcogenide such as As.sub.2 S.sub.3 is coated on a substrate at a very low rate of deposition in a vacuum evaporator and is coated with a thin silver layer. The silver coated layer is exposed to illumination in a quantity insufficient to form an etchable layer by conventional techniques and the silver is increased by treatment with a silver-containing agent capable of depositing silver on the image, preferably in the presence of radiation. NaAgSO.sub.3 is a presently preferred agent. The resulting image-bearing layer is photo-doped by exposure to band-gap radiation and the member is then etched.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.