Reversible memory structure with thermo-optical writing and optical reading and process for writing and erasing said structure
US4371954A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 27, 1981 |
| Grant date | Feb 1, 1983 |
| Priority date | — |
| Expiry date | Jan 27, 2001 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2007/24308
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The invention relates to a reversible memory structure with thermo-optical inscription or writing and optical reading on a moving support. According to the invention, the memory structure deposited on a substrate (1) is constituted by a double layer (2 and 3). A second alloy layer (3) at ambient temperature in the martensitic phase is deposited on a first thermally deformable layer (2). A heat pulse creates a deformation in the first layer, which deforms the martensitic alloy layer. A more powerful heat pulse raises the alloy layer to a temperature above its transformation point from the martensitic phase to another crystallographic phase and erases the inscribed deformation. Particular application to optical disks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.