Semiconductor laser
US4371967A · kind A · utility
13Cited by
0References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 12, 1980 |
| Grant date | Feb 1, 1983 |
| Priority date | — |
| Expiry date | Dec 12, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/916
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a semiconductor laser which has epitaxial layers including an active layer on a semiconductor substrate, a buffer layer is formed neighboring the active layer, in order to prevent undesirable diffusion of a highly diffusing dopant (Zn) into the active layer from an adjacent layer such as the second clad layer. The buffer layer has the same conductivity as that of the adjacent layer, has a broader energy gap than the active layer, and the dopant of the buffer layer is less diffusing than that of the adjacent layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.