Monolithic injection laser arrays formed by crystal regrowth techniques
US4371968A · kind A · utility
17Cited by
5References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 1, 1981 |
| Grant date | Feb 1, 1983 |
| Priority date | — |
| Expiry date | Jul 1, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2202
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A monolithic laser optical cavity structure and method of forming by use of planar photolithographic and crystal regrowth techniques. An original growth multilayer double heterostructure laser structure is grown by LPE on a N+-GaAs substrate. V-grooves are then etched in the epitaxial layers down through the optical cavity by photolithographic techniques. GaAlAs is grown in the V-grooves by crystal regrowth techniques up to the original surface of the laser wafer thus isolating the lasers from each other. The lasers are then separated to form laser arrays.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.