Method of diffusing an impurity
US4373975A · kind A · utility
0Cited by
13References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 26, 1981 |
| Grant date | Feb 15, 1983 |
| Priority date | — |
| Expiry date | Jan 26, 2001 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/909
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Alumina or aluminum is arranged on, or in the vicinity of, a wafer surface into which an impurity, particularly antimony, is to be diffused, and the impurity is vapor-diffused. The impurity can be diffused in much larger quantities than in a prior art vapor diffusion, and a very low sheet resistance for the diffused layer of antimony can be attained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.