Dry etching aluminum
US4373990A · kind A · utility
13Cited by
7References
1Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 8, 1981 |
| Grant date | Feb 15, 1983 |
| Priority date | — |
| Expiry date | Jan 8, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dry etching process for aluminum uses a silicon tetrachloride gas ambient to which is applied radio frequency power for ionizing the gas. By appropriate control of the gas pressure and power density, anisotropic etching is achieved. This gas system also is useful for etching dual layers of aluminum and doped polycrystalline silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.