Optical waveguides in InGaAsP and InP
US4376138A · kind A · utility
16Cited by
3References
16Claims
0Family size
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Inventors
Key dates
| Filing date | Jan 4, 1982 |
| Grant date | Mar 8, 1983 |
| Priority date | — |
| Expiry date | Jan 4, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/918
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Optical waveguides are formed in semiconductors, for example, InP and InGaAsP, by indiffusion of selected metal atoms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.