Semiconductor laser or intensifier
US4376307A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 15, 1980 |
| Grant date | Mar 8, 1983 |
| Priority date | — |
| Expiry date | May 15, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/5009
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser or traveling wave intensifier has an active layer between two passive semiconductor layers, and a strip-shaped electrode geometry. The active layer is uniform in thickness, while at least one of the passive layers within the strip-shaped geometry comprises a strip-shaped zone which contains portions having different refractive indices n.sub.1 and n.sub.2. According to the invention it holds that PA1 (n.sub.1 -n.sub.2) (d.sub.1 -d.sub.2)>0, wherein n.sub.1 is the refractive index of the portion which at least within said strip-shaped zone adjoins the active layer, d.sub.1 is the thickness thereof within the strip-shaped zone, and d.sub.2 is the thickness thereof beside the strip-shaped zone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.