Solid-state cyclotron maser
US4376917A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 1980 |
| Grant date | Mar 15, 1983 |
| Priority date | — |
| Expiry date | Jun 25, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S1/005
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A solid-state cyclotron maser for generating low power (1 watt or less) signals in the submillimeter frequency range (300 GHz-30,000 GHz) includes an accelerating region, a drift region, and a metal grid therebetween. Both regions are formed from semiconductor material, such as indium antimonide, having non-parabolic energy bands. The drift region is a thin disc having metallized outer surfaces, but includes an annular opening in the metal on the front side and a circular opening in the metal on the back side, and is grounded. A grid of metal rings is placed on the annular opening of the drift region. The accelerating region is a hollow cylinder having a metallized front surface. It couples to the drift region for covering the annular opening and the grid. A negative bias voltage is applied to the accelerating region and a magnetic field is applied to the maser at an angle to the axis of the maser. Electrons propagate in spiral trajectories through the accelerating region, grid and drift region. Movement of electrons within the non-parabolic energy bands of the semiconductor material causes changes in the effective mass of the electrons. Phase-bunching of electrons occurs and elect…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.