Semiconductor laser
US4377865A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 1980 |
| Grant date | Mar 22, 1983 |
| Priority date | — |
| Expiry date | Dec 19, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2235
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
On an n-type semiconductor substrate having a ridge part of stripe-shaped pattern, the following layers are formed by liquid phase sequential epitaxial growth: an undoped active layer; a p-type clad layer; and an n-type isolation layer. Thereafter, a Cd impurity is diffused in the isolation layer in a stripe-shaped pattern at the position above the ridge part, thereby forming a p+-type conduction region in the central part of the isolation layer. By forming the stripe-shaped ridge part on the substrate overriding the active layer, the injected current is effectively confined to the lasing region which is the thinner part of the active layer and is on the ridge part. Therefore the threshold current is decreased. Accordingly, the light lased in the active layer is effectively confined in a stripe-shaped lasing region thereof, and a stable transverse mode of lasing is obtainable.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.