Electrophotographic member with .alpha.-Si layers
US4378417A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 15, 1981 |
| Grant date | Mar 29, 1983 |
| Priority date | — |
| Expiry date | Apr 15, 2001 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/08221
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In an electrophotographic member employing an amorphous silicon photoconductive layer, a part which is at least 10 nm thick inwardly of the amorphous silicon layer from the surface (or interface) of the amorphous silicon layer is made of amorphous silicon which has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 10.sup.10 .OMEGA..cm. The electrophotographic member exhibits a satisfactory resolution and good dark-decay characteristics. Further, a region which has an optical forbidden band gap narrower than that of the amorphous silicon forming the surface (or interface) region is disposed within the amorphous silicon layer to a thickness of at least 10 nm, whereby the sensitivity of the electrophotographic member to longer wavelengths of light can be enhanced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.