Semiconductor laser having broadband laser gain
US4378599A · kind A · utility
3Cited by
0References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 3, 1981 |
| Grant date | Mar 29, 1983 |
| Priority date | — |
| Expiry date | Mar 3, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/18369
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Broadband laser gain is obtained in semiconductor materials by pumping an ultra-short laser cavity with picosecond excitation pulses. The broadband laser gain is used to provide picosecond laser radiation energy covering a wide spectrum of frequencies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.