Method of and apparatus for control of reactive sputtering deposition
US4379040A · kind A · utility
101Cited by
16References
14Claims
0Family size
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Key dates
| Filing date | Feb 18, 1982 |
| Grant date | Apr 5, 1983 |
| Priority date | — |
| Expiry date | Feb 18, 2002 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/155
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method and apparatus for the control of reactive sputtering deposition of oxide-containing films, including the monitoring of and maintaining the constancy of the deposition rate and total pressure of the system by adjustment of the oxygen and argon input flow rates. Deposition rate is monitored by an activated quartz crystal, and behave as a sensitive function of actual oxygen partial pressure. Stoichiometry, optical and electrical properties of the oxide-containing films are therefore controllable by maintaining constant oxygen partial pressure.
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