Electrophotographic photoconductor of halogen-doped Se-Te alloy layers
US4379820A · kind A · utility
6Cited by
3References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 17, 1981 |
| Grant date | Apr 12, 1983 |
| Priority date | — |
| Expiry date | Apr 17, 2001 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/0433
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A layered electrophotographic photoconductor comprising an electrically conductive base; a charge transporting layer, formed on the electrically conductive base, which charge transporting layer comprises a selenium-tellurium alloy, doped with halogen; and a charge generating layer, formed on the charge transporting layer, which charge generating layer comprises a selenium-tellurium-arsenic alloy, doped with halogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.