Electrophotographic recording material with As.sub.2 Se.sub.3-x Te.sub.x charge generating layer
US4379821A · kind A · utility
4Cited by
6References
8Claims
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Key dates
| Filing date | Jun 3, 1981 |
| Grant date | Apr 12, 1983 |
| Priority date | — |
| Expiry date | Jun 3, 2001 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/082
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An electrophotographic recording material including a dual photoconductive layer containing selenium applied to an electrically conductive substrate. The dual photoconductive layer includes a layer of arsenic selenide applied to the substrate, and a layer of an arsenic-selenium-tellurium compound superposed on the arsenic selenide layer. The arsenic-selenium-tellurium compound has the formula As.sub.2 Se.sub.3-x Te.sub.x, where 0<X<3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.