Active high frequency semiconductor device with integral waveguide
US4380020A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 21, 1980 |
| Grant date | Apr 12, 1983 |
| Priority date | — |
| Expiry date | Jan 21, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An active semiconductor device, such as a Gunn effect device, capable of operation at extremely high frequencies, fabricated in situ on a substrate that also serves as a dielectric waveguide to propagate energy from the device. In the embodiment disclosed, a Gunn effect diode is formed on a substrate of gallium arsenide (GaAs), together with a cavity region and a metalized heat sink layer permitting operation at relatively high power levels. A bias current is applied through a conductive strip and then through the cavity region to the diode, and a quarter-wave choke is provided in the conductive strip to prevent transmission of radio-frequency energy back along the strip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.