Method of making a semiconductor device with a seal
US4380115A · kind A · utility
10Cited by
3References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 17, 1981 |
| Grant date | Apr 19, 1983 |
| Priority date | — |
| Expiry date | Aug 17, 2001 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/958
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A seal for a semiconductor device in which the semiconductor has a major surface with a metal layer overlying the major surface. An insulating layer of glass is formed on the metal layer and a passive sealing silicon layer is formed on the glass layer for protecting the device from contamination.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.