Polycrystalline diamond and cemented carbide substrate and synthesizing process therefor
US4380471A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 5, 1981 |
| Grant date | Apr 19, 1983 |
| Priority date | — |
| Expiry date | Jan 5, 2001 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2237/708
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A polycrystalline diamond body infiltrated by a silicon atom-containing metal (e.g., silicon alloy) is bonded to a substrate comprising cemented carbide with a barrier of refractory material extending between the diamonds cemented together with silicon atom-containing binder and the substrate substantially precluding migration of the cementing medium (e.g., cobalt) from the carbide substrate into contact with the silicon atom-containing bonding medium in the diamond body. The process comprises subjecting a mass of diamond powder, a quantity of silicon atom-containing metal binder material, a cemented carbide body and a barrier made of material selected from the group consisting of tantalum, vanadium, molybdenum, zirconium, tungsten and alloys thereof to the simultaneous application of elevated temperature and pressure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.