Channel hot electron monitor
US4382229A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 28, 1980 |
| Grant date | May 3, 1983 |
| Priority date | — |
| Expiry date | Nov 28, 2000 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2621
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
This teaches that by measuring the rate of change in gate current of an insulating gate field effect transistor, under normal operating conditions, the time required to achieve a predetermined change in source-to-drain current in the transistor can be found. Because changes in gate current depends more on sensitivity on charge trapping in the oxide than do changes in channel current, and since the gate current occurs only in the small region of electron emission, the effects on gate current are more quickly developed than the secondary effect of reduced channel current due to the charge in gate oxide caused by the presence of trapped electrons.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.