Novel silicon crystals and process for their preparation
US4382838A · kind A · utility
18Cited by
10References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 26, 1976 |
| Grant date | May 10, 1983 |
| Priority date | — |
| Expiry date | Jan 26, 1996 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F99/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A plate-like silicon crystal having a columnar structure formed along the direction of the shortest axis, produced by cooling molten silicon, which may contain a doping agent, in a temperature gradient between the two largest boundary surfaces of the melt, one of which has a maximum temperature of 1200.degree. C., and the opposite surface being at least 200.degree. to 1000.degree. C. higher, but below the melting point of silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.