Avalanche photodiode and method of making same
US4383267A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 17, 1980 |
| Grant date | May 10, 1983 |
| Priority date | — |
| Expiry date | Oct 17, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/241
Abstract
The invention is an improved avalanche photodiode having higher sensitivity at short wavelengths and a method of making it. The improvement comprises a contacting layer of varying thickness which can have a thin portion through which light enters the avalanche photodiode and a thicker portion surrounding the thin portion to which electrical contact can be made. This structure exhibits substantially greater sensitivity at wavelengths less than 500 nanometers without affecting the long wavelength sensitivity. The invention is also a method of forming the avalanche photodiode where the thicker portion and the thinner portions are sequentially formed using a two-step diffusion process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.