Semiconductive barium titanate
US4384989A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 30, 1982 |
| Grant date | May 24, 1983 |
| Priority date | — |
| Expiry date | Apr 30, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01C7/025
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Semiconductive barium titanate having a positive temperature coefficient of resistance comprises a barium titanate semiconductor including barium titanate and a small quantity of a doping element, and at least one additive selected from among silicon nitride, titanium nitride, zirconium nitride and silicon carbide. The semiconductive barium titanate of this invention has a sharp rise in the variation of specific resistivity with temperature change and a large specific resistivity ratio in the PTC temperature region, and can be produced with high reproducibility, since a widely differing quantity of the doping element can be effectively added to barium titanate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.