Method and device for compensating temperature-dependent characteristic change in ion-sensitive FET transducer
US4385274A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 1981 |
| Grant date | May 24, 1983 |
| Priority date | — |
| Expiry date | Apr 27, 2001 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/414
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An electrical circuitry for use in the measurement of the activity of ions in an electrolyte solution carried out by the use of an ion-sensitive field-effect transistor transducer having a gate or ion sensitive layer, a source and a drain. The measurement is carried out by adjusting the drain current flowing through the field-effect transistor to a predetermined value such that the temperature dependency of the electroconductivity of the channel of the transistor becomes equal to the sum of the temperature dependency of the potential at an interface between a reference electrode and the electrolyte solution and the temperature dependency of the potential at an interface between the ion-sensitive layer and the electrolyte solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.