Surface treatment of semiconductor materials
US4386142A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 1980 |
| Grant date | May 31, 1983 |
| Priority date | — |
| Expiry date | Oct 14, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S204/03
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A process for preparing the surface of a metal chalcogenide. The metal chalcogenide is immersed in a suitable electrolyte. The electrolyte is selected such that the metal chalcogenide is relatively stable therein in the dark, but unstable as a photoelectrode under illumination. The metal chalcogenide is connected to another electrode; and the electrode is immersed in the electrolyte. The metal chalcogenide is illuminated to photoetch the chalcogenide thereby improving the surface electronic properties of the semiconductor. A process for the surface treatment of metal chalcogenides including immersing the metal chalcogenide in an aqueous solution containing Zn and/or Cr ions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.