Lift-off shadow mask
US4387145A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 1981 |
| Grant date | Jun 7, 1983 |
| Priority date | — |
| Expiry date | Sep 28, 2001 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/951
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a predetermined configuration of a film material comprises the steps of forming a layer of a first material on a surface, forming a layer of a second material on the first material wherein the first material has an etch rate greater than that of the second material when the first material and the second material are exposed to a common etchant, etching portions of the second material and underlying portions of the first material to expose portions of the surface, forming a layer of film material on the exposed portions of the surface, forming a layer of film material on the exposed portions of the surface and on the remaining portions of the second material, and removing the remaining portions of the first material such that the overlying second material and the film material thereon is also removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.