Microwave controlled field effect switching device
US4387386A · kind A · utility
10Cited by
9References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 9, 1980 |
| Grant date | Jun 7, 1983 |
| Priority date | — |
| Expiry date | Jun 9, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/87
Abstract
A microwave switching device replacing PIN diodes and operating at higher eeds requires reduced switching current. A field effect controlled device is utilized with no ground plane, for elimination of source-ground and drain-ground capacitance. Massive source and drain structures reduce terminal inductance. A low resistance active region provides dynamic switching capability improving over prior art devices in operating frequencies and speeds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.