Random access memory cell
US4387445A · kind A · utility
6Cited by
11References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 24, 1981 |
| Grant date | Jun 7, 1983 |
| Priority date | — |
| Expiry date | Feb 24, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K3/288
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Two memory cells each can be entirely fabricated in only two isolation beds. In one embodiment each bed contains one lateral PNP and one vertical NPN transistor in a merged structure. In a second embodiment, each bed contains one lateral PNP and two vertical NPN transistors in a merged structure. Memory access circuitry provides a high ratio of selected to unselected cell current in order to permit fast memory operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.