Laser annealing for growth of single crystal semiconductor areas
US4388145A · kind A · utility
36Cited by
3References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 29, 1981 |
| Grant date | Jun 14, 1983 |
| Priority date | — |
| Expiry date | Oct 29, 2001 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/904
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for laser induced conversion of large predefined areas of amorphous or polycrystalline semiconductor material, upon a substrate, into single crystal areas by using an infrared laser energy source to cause the bulk of heating to occur in the substrate and not in the predefined areas so that the areas are heated to melting by the substrate. The substrate comprises a material which is highly absorptive of the laser wavelength and the predefined areas comprise a material substantially transparent to laser wavelength, and the substrate and areas have different refractive indexes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.