Ion selective electrode
US4388167A · kind A · utility
5Cited by
4References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 30, 1982 |
| Grant date | Jun 14, 1983 |
| Priority date | — |
| Expiry date | Aug 30, 2002 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/333
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An ion selective electrode having a silicon wafer substrate secured to one end of a tube made of insulating material by an adhesive agent and an ion sensitive film applied on the outer surface of silicon wafer substrate is disclosed. In order to prevent a portion of a side edge of silicon wafer substrate from being exposed to a sample liquid to be measured, the side edge of silicon wafer substrate is tapered and the ion sensitive film is applied on the tapered side edge as well as on the outer surface of silicon wafer substrate. The tapered side edge may be simply formed by effecting an anisotropic etching for a silicon wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.