Transistor with improved second breakdown capability
US4388634A · kind A · utility
5Cited by
8References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 4, 1980 |
| Grant date | Jun 14, 1983 |
| Priority date | — |
| Expiry date | Dec 4, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/137
Abstract
A transistor having increased reverse second breakdown capabilities includes a collector formed with a high resistivity region including a channel portion adjacent the central portion of the emitter and with a lower resistivity region forming an interface around said channel portion. The second region is arranged to include a portion located laterally inwardly of the outer edges of the emitter so that a preferential current path is provided that defocuses the minority carriers injected by the emitter during the time the transistor is being switched off.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.