Process for forming photoresists with strong resistance to reactive ion etching and high sensitivity to mid- and deep UV-light
US4389482A · kind A · utility
12Cited by
6References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 14, 1981 |
| Grant date | Jun 21, 1983 |
| Priority date | — |
| Expiry date | Dec 14, 2001 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/40
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photoresist that has strong resistance to reactive ion etching, high photosensitivity to mid- and deep UV-light, and high resolution capability is formed by using as the resist material a copolymer of methacrylonitrile and methacrylic acid, and by baking the resist before the exposure to light for improved photosensitivity, and after exposure to light, development, and prior to treatment with reactive ion etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.