Amorphous silicon solar cell having improved antireflection coating
US4389534A · kind A · utility
18Cited by
1References
1Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 11, 1981 |
| Grant date | Jun 21, 1983 |
| Priority date | — |
| Expiry date | Dec 11, 2001 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
A semiconductor solar cell for the conversion of light to electric energy comprises at least one layer of amorphous silicon, a cover layer of poly-crystalline silicon and an anti-reflection layer of semiconducting transparent oxide of a refractive index of less than 2.8. The cover layer of poly-crystalline silicon has an optical density ##EQU1## or it may be ##EQU2## The cover layer is arranged between the anti-friction layer and the layer of amorphous silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.