Semiconductor laser bonding technique
US4389557A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 17, 1981 |
| Grant date | Jun 21, 1983 |
| Priority date | — |
| Expiry date | Aug 17, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/042
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a method and apparatus for bonding a semiconductor laser chip to a heatsink and testing the bond obtained, temperature in the bonding operation is regulated by passing a small fixed current through the forward biased laser and monitoring corresponding change in voltage caused by alteration of the laser pn junction temperature. Current is passed to the laser through a floating contact consisting of a conducting vacuum pick-up pressed against the laser top surface. Bond integrity is subsequently tested at low temperature by passing a dc current greater than a threshold current through the laser and measuring the resulting light output and then passing a pulsed current with identical peak current level and again measuring light output. The difference in light output is a function of the bond thermal resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.