Semiconductor switching device for guiding and amplifying radiation
US4389567A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 1980 |
| Grant date | Jun 21, 1983 |
| Priority date | — |
| Expiry date | May 30, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/4918
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor switching device for guiding and amplifying electromagnetic radiation is disclosed. An electrode pattern which defines a number of strip-shaped guiding members is provided on a layer structure analogous to that of a semiconductor laser. According to the invention the radiation guiding members have tapering juxtaposed ends in a transition area. Adjacent radiation guiding members in the transition area are situated within each other's amplification profile. The radiation guiding members are preferably separated from each other by insulation areas which do not extend to the common active layer. The invention may be used, for example, in switching radiation signals between two or more radiation paths in optical communication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.