Photodiode having an InGaAs layer with an adjacent InGaAsP p-n junction
US4390889A · kind A · utility
17Cited by
2References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 9, 1980 |
| Grant date | Jun 28, 1983 |
| Priority date | — |
| Expiry date | Oct 9, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/222
Abstract
A photodetector useful between 1.0 and 1.6 microns and having an InGaAs layer with an adjacent InGaAsP p-n junction disposed on the InGaAs layer is described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.