Semiconductor device
US4392152A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 31, 1980 |
| Grant date | Jul 5, 1983 |
| Priority date | — |
| Expiry date | Oct 31, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1579
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device wherein a semiconductor element is bonded with brazing material on a metalized layer formed on an insulating substrate, with lead wires being used to connect the electrodes of the semiconductor element to the metalized layer. An element bonding area and lead wire connecting areas are provided on the metalized layer and are separated, at the inside of an aperture provided in a sealing member which seals the semiconductor element, by separation regions. Therefore, the brazing material used for securing the semiconductor element to the metalized layer does not flow up to the lead wire connecting areas, thus improving the manufacturing yield and reliability of the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.