Interlaced solid-state imaging device
US4392158A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 1981 |
| Grant date | Jul 5, 1983 |
| Priority date | — |
| Expiry date | Apr 24, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/78
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
In a solid-state imaging device having a plurality of photodiodes which are arrayed in two dimensions on an identical semiconductor body, a group of horizontal switching elements and a group of vertical switching elements which pick up the photodiodes, and a horizontal scanning circuit and a vertical scanning circuit which impress scanning pulses on the horizontal and vertical switching elements respectively, and having an interlaced scanning mechanism which picks up a plurality of vertical scanning lines by means of interlace switching elements so as to permit horizontal scanning of scanning lines of a plurality of rows; a solid-state imaging device characterized in that said interlaced scanning mechanism includes insulated-gate field effect transistors for recovering voltage levels of the scanning pulses having undergone voltage drops due to the interlace switching elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.