Method of doping a semiconductor
US4392928A · kind A · utility
2Cited by
1References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 26, 1982 |
| Grant date | Jul 12, 1983 |
| Priority date | — |
| Expiry date | Jan 26, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/479
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.