Photoconductive member with .alpha.-Si(C) barrier layer

US4394425A · kind A · utility

Assignee

• Canon Kabushiki Kaisha · JP

Inventors

• Isamu Shimizu · Yokohama, JP
• Shigeru Shirai · Yamato, JP
• Eiichi Inoue · Setagaya, JP

Key dates

• Filing date: Sep 4, 1981
• Grant date: Jul 19, 1983
• Expiry date: Sep 4, 2001

Classification

• Technology area (CPC G): Physics
• CPC primary: G03G5/08235
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A photoconductive member comprises a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms, and an intermediate layer provided between them, said intermediate layer having a function to bar penetration of carriers from the side of the support into the photoconductive layer and to permit passage from the photoconductive layer to the support of photocarriers generated in the photoconductive layer by projection of electromagnetic waves and movement of the photocarriers toward the side of the support, and said intermediate layer being constituted of an amorphous material containing silicon atoms and carbon atoms a constituents. A photoconductive member having a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms as a constituent, and an intermediate layer provided between said support and said photoconductive layer, is characterized in that said intermediate layer is constituted of an amorphous material containing silicon atoms and carbon atoms as constitution elements. A photoconductive mem…