Photoconductive member with .alpha.-Si(N) barrier layer
US4394426A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 1981 |
| Grant date | Jul 19, 1983 |
| Priority date | — |
| Expiry date | Sep 22, 2001 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/08221
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photoconductive member comprise a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms, and an intermediate layer provided between them, said intermediate layer having a function to bar penetration of carriers from the side of the support into the photoconductive layer and to permit passage from the photoconductive layer to the support of photocarriers generated in the photoconductive layer by projection of electromagnetic waves and movement of the photocarriers toward the side of the support, and said intermediate layer being constituted of an amorphous material containing silicon atoms and carbon atoms as constituents. A photoconductive member having a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms as a constituent, and an intermediate layer provided between said support and said photoconductive layer, is characterized in that said intermediate layer is constituted of an amorphous material containing silicon atoms and nitrogen atoms as constitution elements. A photoconductive m…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.