Method for the manufacture of resist structures

US4395481A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Siegfried Birkle · Höchstadt an der Aisch, DE
• Roland Rubner · Königsee, DE
• Hans Hauschildt · Erlangen, DE
• Eva Rissel · Forchheim, DE

Key dates

• Filing date: Sep 25, 1981
• Grant date: Jul 26, 1983
• Expiry date: Sep 25, 2001

Classification

• Technology area (CPC G): Physics
• CPC primary: G05F1/577
• WIPO field: Control
• WIPO sector: Instruments

Abstract

The invention relates to a method for the manufacture of positive resist structures by means of short-wave UV rays and has the objective to develop such a method in a manner such that increased sensitivity and resolution as well as high thermal stability and, in addition, transparency in the wave-length range above 260 nm can be achieved. According to the invention, it is provided for this purpose to use as the resist material copolymers of 1 to 70 mol % alkylmethacrylate with an alkyl radical having 1 to 4 C atoms, and 99 to 30 mol % of an ethylenically unsaturated monomer with chlorine and/or cyan substituents. The method according to the invention is particularly well suited for producing resist structures about 0.5 to 2 .mu.m thick by means of UV rays in the wave-length range between about 180 to 260 nm.