Reduction of leakage current in InGaAs diodes
US4396443A · kind A · utility
8Cited by
3References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 18, 1982 |
| Grant date | Aug 2, 1983 |
| Priority date | — |
| Expiry date | Jan 18, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The reverse leakage current of InGaAs diodes, in particular the dark current of In.sub.0.53 Ga.sub.0.47 As photodiodes, is reduced by a treatment in a 1:1:X solution of H.sub.2 O.sub.2 :H.sub.2 SO.sub.4 :H.sub.2 O where 10.ltoreq..times..ltoreq.100 approximately.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.