Apparatus and method for substrate temperature control
US4396640A · kind A · utility
9Cited by
2References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 22, 1981 |
| Grant date | Aug 2, 1983 |
| Priority date | — |
| Expiry date | Dec 22, 2001 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/541
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus and a method for controlling the temperature of a substrate onto which thin films of semiconductor materials are vapor deposited. The apparatus contains a platen contacting a surface of said substrate over the entire length of the deposition zone; said platen having at least one cavity therein and a rounded edge where said substrate first contacts said platen of the beginning of said deposition zone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.