Tunnel emitter upper valley transistor
US4396931A · kind A · utility
11Cited by
6References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 12, 1981 |
| Grant date | Aug 2, 1983 |
| Priority date | — |
| Expiry date | Jun 12, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D48/362
Abstract
The invention is a three-terminal transistor structure having five layers of materials that in combination provide conduction by high mobility carrier transport across the base in an energy valley above the conduction band. The conduction is by majority carrier tunneling injection from the emitter and transport at an upper valley level across the base. The resulting structure is capable of switching in times of 10.sup.-12 seconds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.