Thermally reprogrammable memory array and a thermally reprogrammable memory cell therefor
US4396998A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 27, 1980 |
| Grant date | Aug 2, 1983 |
| Priority date | — |
| Expiry date | Aug 27, 2000 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C17/14
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An electrically programmable memory cell comprises two terminals, a unidirectional and/or controllable semiconductor device having anode and cathode regions and a programmable resistor, said anode and cathode regions of the semiconductor device and the programmable resistor being connected in series between the terminals. The programmable resistor comprises a mixture of finely divided metallic material dispersed in a thermoplastic resin. The programmable resistor is initially substantially nonconductive (having a resistivity, for example, in excess of 1 mega ohms per cubic cm). By forcing a sufficient current through the terminals for a period of time, the resistance of the programmable resistor drops drastically to the extent that it may be considered a conductor (having a resistivity, for example, of less than 100 ohms per cubic cm). The programmable resistor may be returned to its substantially nonconductive condition by heating to a temperature above which the memory cell is normally used and below which the semiconductor device is damaged. The semiconductor device may be a transistor, for example, a field effect transistor, a diode or the like.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.