Zone purification of silicon in a reactive plasma

US4399116A · kind A · utility

Assignee

• Electricite de France - Service National · FR

Inventors

• Jacques Amouroux · Les Ulis, FR
• Daniel Morvan · Paris, FR

Key dates

• Filing date: Jul 28, 1981
• Grant date: Aug 16, 1983
• Expiry date: Jul 28, 2001

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B13/22
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Boron is removed from silicon by zone melting purification. A jet of hot plasma obtained by high frequency excitation is directed on a zone of a bar of silicon to be purified. The plasma is formed from a mixture of a plasma-producing gas, such as argon, and an amount of oxygen which is sufficiently low to avoid oxidization of silicon.