Method for preparing transparent, electrically conducting indium oxide (In.sub.2 O.sub.3) films

US4400254A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Helmut Freller · Westerburg, DE
• Peter Schack · Nuremberg, DE

Key dates

• Filing date: Jan 18, 1982
• Grant date: Aug 23, 1983
• Expiry date: Jan 18, 2002

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C03C2218/154
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

Indium-tin alloy targets are high-frequency cathode sputtered using water vapor with a pressure of between 10.sup.-3 mbar and 5.times.10.sup.-3 mbar as the reaction gas. The temperature-sensitive substrates used are water-cooled during the deposition. This is a continuation of application Ser. No. 168,244 filed July 10, 1980, now abandoned.